Кіріспе
Электр техникасы теңдеуі Шокли диод теңдеуі немесе диод заңы, транзистордың бір авторы Уильям Шоклидің есімімен аталып, Bell Labs компаниясында жасалған, жартылай өткізгіш диодтардың орташа тұрақты токпен тікелей немесе кері бағыттағы ток-кернеу (I–V) қатынасын экспоненциалды түрде моделідейді:
Electrical engineering equation
The Shockley diode equation, or the diode law, named after transistor co inventor William Shockley of Bell Labs, models the exponential current–voltage (I–V) relationship of semiconductor diodes in moderate constant current forward bias or reverse bias:
where
is the diode current,
is the reverse bias saturation current (or scale current),
is the voltage across the diode,
is the thermal voltage, and
is the ideality factor, also known as the quality factor or emission coefficient. The equation is called the Shockley ideal diode equation when the ideality factor equals 1, thus is sometimes omitted. The ideality factor typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material. The ideality factor was added to account for imperfect junctions observed in real transistors, mainly due to carrier recombination as charge carriers cross the depletion region. The thermal voltage is approximately 25.852mV at At an arbitrary temperature, it is a known constant:
where
is the Boltzmann constant,
is the absolute temperature of the p–n junction, and
is the elementary charge (the magnitude of an electron's charge). The reverse saturation current is not constant for a given device, but varies with temperature; usually more significantly than , so that typically decreases as increases. Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, although this is obviously a function of size). For moderate forward bias voltages the exponential becomes much larger than 1, since the thermal voltage is very small in comparison. The in the diode equation is then negligible, so the forward diode current will approximate
The use of the diode equation in circuit problems is illustrated in the article on diode modeling.
The Shockley diode equation, or the diode law, named after transistor co inventor William Shockley of Bell Labs, models the exponential current–voltage (I–V) relationship of semiconductor diodes in moderate constant current forward bias or reverse bias:
where
is the diode current,
is the reverse bias saturation current (or scale current),
is the voltage across the diode,
is the thermal voltage, and
is the ideality factor, also known as the quality factor or emission coefficient. The equation is called the Shockley ideal diode equation when the ideality factor equals 1, thus is sometimes omitted. The ideality factor typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material. The ideality factor was added to account for imperfect junctions observed in real transistors, mainly due to carrier recombination as charge carriers cross the depletion region. The thermal voltage is approximately 25.852mV at At an arbitrary temperature, it is a known constant:
where
is the Boltzmann constant,
is the absolute temperature of the p–n junction, and
is the elementary charge (the magnitude of an electron's charge). The reverse saturation current is not constant for a given device, but varies with temperature; usually more significantly than , so that typically decreases as increases. Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, although this is obviously a function of size). For moderate forward bias voltages the exponential becomes much larger than 1, since the thermal voltage is very small in comparison. The in the diode equation is then negligible, so the forward diode current will approximate
The use of the diode equation in circuit problems is illustrated in the article on diode modeling.
мұнда:
– диод тогы,
– кері бағыттағы қанығу тогы (немесе масштабтық ток),
– диодтағы кернеу,
– жылулық кернеу, және
– идеалдық коэффициент, сондай-ақ сапа факторы немесе эмиссиялық коэффициент деп аталады. Идеалдық коэффициенті 1-ге тең болғанда бұл теңдеу Шоклидің идеалдық диод теңдеуі деп аталады, сондықтан кейде алынып тасталады. Идеалдық коэффициенті әдетте 1-ден 2-ге дейін өзгереді (бірақ кейбір жағдайларда одан да жоғары болуы мүмкін), бұл өндіріс процесіне және жартылай өткізгіш материалға байланысты. Идеалдық коэффициенті нақты транзисторларда байқалатын жетілмеген түйісулерді ескеру үшін қосылды, негізінен заряд тасымалдаушылар сарқылу аймағынан өтетін кезде тасымалдаушыларды қайта біріктіруден туындайды. Жылулық кернеу шамамен 25.852 мВ температурада белгілі бір тұрақты шама:
Electrical engineering equation
The Shockley diode equation, or the diode law, named after transistor co inventor William Shockley of Bell Labs, models the exponential current–voltage (I–V) relationship of semiconductor diodes in moderate constant current forward bias or reverse bias:
where
is the diode current,
is the reverse bias saturation current (or scale current),
is the voltage across the diode,
is the thermal voltage, and
is the ideality factor, also known as the quality factor or emission coefficient. The equation is called the Shockley ideal diode equation when the ideality factor equals 1, thus is sometimes omitted. The ideality factor typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material. The ideality factor was added to account for imperfect junctions observed in real transistors, mainly due to carrier recombination as charge carriers cross the depletion region. The thermal voltage is approximately 25.852mV at At an arbitrary temperature, it is a known constant:
where
is the Boltzmann constant,
is the absolute temperature of the p–n junction, and
is the elementary charge (the magnitude of an electron's charge). The reverse saturation current is not constant for a given device, but varies with temperature; usually more significantly than , so that typically decreases as increases. Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, although this is obviously a function of size). For moderate forward bias voltages the exponential becomes much larger than 1, since the thermal voltage is very small in comparison. The in the diode equation is then negligible, so the forward diode current will approximate
The use of the diode equation in circuit problems is illustrated in the article on diode modeling.
The Shockley diode equation, or the diode law, named after transistor co inventor William Shockley of Bell Labs, models the exponential current–voltage (I–V) relationship of semiconductor diodes in moderate constant current forward bias or reverse bias:
where
is the diode current,
is the reverse bias saturation current (or scale current),
is the voltage across the diode,
is the thermal voltage, and
is the ideality factor, also known as the quality factor or emission coefficient. The equation is called the Shockley ideal diode equation when the ideality factor equals 1, thus is sometimes omitted. The ideality factor typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material. The ideality factor was added to account for imperfect junctions observed in real transistors, mainly due to carrier recombination as charge carriers cross the depletion region. The thermal voltage is approximately 25.852mV at At an arbitrary temperature, it is a known constant:
where
is the Boltzmann constant,
is the absolute temperature of the p–n junction, and
is the elementary charge (the magnitude of an electron's charge). The reverse saturation current is not constant for a given device, but varies with temperature; usually more significantly than , so that typically decreases as increases. Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, although this is obviously a function of size). For moderate forward bias voltages the exponential becomes much larger than 1, since the thermal voltage is very small in comparison. The in the diode equation is then negligible, so the forward diode current will approximate
The use of the diode equation in circuit problems is illustrated in the article on diode modeling.
мұнда:
Electrical engineering equation
The Shockley diode equation, or the diode law, named after transistor co inventor William Shockley of Bell Labs, models the exponential current–voltage (I–V) relationship of semiconductor diodes in moderate constant current forward bias or reverse bias:
where
is the diode current,
is the reverse bias saturation current (or scale current),
is the voltage across the diode,
is the thermal voltage, and
is the ideality factor, also known as the quality factor or emission coefficient. The equation is called the Shockley ideal diode equation when the ideality factor equals 1, thus is sometimes omitted. The ideality factor typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material. The ideality factor was added to account for imperfect junctions observed in real transistors, mainly due to carrier recombination as charge carriers cross the depletion region. The thermal voltage is approximately 25.852mV at At an arbitrary temperature, it is a known constant:
where
is the Boltzmann constant,
is the absolute temperature of the p–n junction, and
is the elementary charge (the magnitude of an electron's charge). The reverse saturation current is not constant for a given device, but varies with temperature; usually more significantly than , so that typically decreases as increases. Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, although this is obviously a function of size). For moderate forward bias voltages the exponential becomes much larger than 1, since the thermal voltage is very small in comparison. The in the diode equation is then negligible, so the forward diode current will approximate
The use of the diode equation in circuit problems is illustrated in the article on diode modeling.
The Shockley diode equation, or the diode law, named after transistor co inventor William Shockley of Bell Labs, models the exponential current–voltage (I–V) relationship of semiconductor diodes in moderate constant current forward bias or reverse bias:
where
is the diode current,
is the reverse bias saturation current (or scale current),
is the voltage across the diode,
is the thermal voltage, and
is the ideality factor, also known as the quality factor or emission coefficient. The equation is called the Shockley ideal diode equation when the ideality factor equals 1, thus is sometimes omitted. The ideality factor typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material. The ideality factor was added to account for imperfect junctions observed in real transistors, mainly due to carrier recombination as charge carriers cross the depletion region. The thermal voltage is approximately 25.852mV at At an arbitrary temperature, it is a known constant:
where
is the Boltzmann constant,
is the absolute temperature of the p–n junction, and
is the elementary charge (the magnitude of an electron's charge). The reverse saturation current is not constant for a given device, but varies with temperature; usually more significantly than , so that typically decreases as increases. Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, although this is obviously a function of size). For moderate forward bias voltages the exponential becomes much larger than 1, since the thermal voltage is very small in comparison. The in the diode equation is then negligible, so the forward diode current will approximate
The use of the diode equation in circuit problems is illustrated in the article on diode modeling.
– Больцман тұрақтысы,
– p–n түйісудің абсолютті температурасы, және
– элементарлық заряд (электрон зарядының шамасы). Кері қанығу тогы берілген құрылғы үшін тұрақты емес, бірақ температураға байланысты өзгереді; әдетте, температурадан гөрі одан да маңыздырақ, сондықтан әдетте температура жоғарылағанда төмендейді. Кері бағытта диод теңдеуінің экспоненциалдық мүшесі 0-ге жуық, сондықтан ток шамамен тұрақты кері ток мәніне жуық (силиций диодтары үшін шамамен пикоампер немесе германий диодтары үшін микроампер, бірақ бұл, әрине, өлшемнің функциясы). Орташа тікелей бағыттағы кернеулер үшін экспонента 1-ден әлдеқайда үлкен болады, себебі жылулық кернеу салыстырғанда өте кішкентай. Сондықтан диод теңдеуіндегі мүшесі елеусіз болады, сондықтан тікелей диод тогы шамамен келесідей болады:
Electrical engineering equation
The Shockley diode equation, or the diode law, named after transistor co inventor William Shockley of Bell Labs, models the exponential current–voltage (I–V) relationship of semiconductor diodes in moderate constant current forward bias or reverse bias:
where
is the diode current,
is the reverse bias saturation current (or scale current),
is the voltage across the diode,
is the thermal voltage, and
is the ideality factor, also known as the quality factor or emission coefficient. The equation is called the Shockley ideal diode equation when the ideality factor equals 1, thus is sometimes omitted. The ideality factor typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material. The ideality factor was added to account for imperfect junctions observed in real transistors, mainly due to carrier recombination as charge carriers cross the depletion region. The thermal voltage is approximately 25.852mV at At an arbitrary temperature, it is a known constant:
where
is the Boltzmann constant,
is the absolute temperature of the p–n junction, and
is the elementary charge (the magnitude of an electron's charge). The reverse saturation current is not constant for a given device, but varies with temperature; usually more significantly than , so that typically decreases as increases. Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, although this is obviously a function of size). For moderate forward bias voltages the exponential becomes much larger than 1, since the thermal voltage is very small in comparison. The in the diode equation is then negligible, so the forward diode current will approximate
The use of the diode equation in circuit problems is illustrated in the article on diode modeling.
The Shockley diode equation, or the diode law, named after transistor co inventor William Shockley of Bell Labs, models the exponential current–voltage (I–V) relationship of semiconductor diodes in moderate constant current forward bias or reverse bias:
where
is the diode current,
is the reverse bias saturation current (or scale current),
is the voltage across the diode,
is the thermal voltage, and
is the ideality factor, also known as the quality factor or emission coefficient. The equation is called the Shockley ideal diode equation when the ideality factor equals 1, thus is sometimes omitted. The ideality factor typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material. The ideality factor was added to account for imperfect junctions observed in real transistors, mainly due to carrier recombination as charge carriers cross the depletion region. The thermal voltage is approximately 25.852mV at At an arbitrary temperature, it is a known constant:
where
is the Boltzmann constant,
is the absolute temperature of the p–n junction, and
is the elementary charge (the magnitude of an electron's charge). The reverse saturation current is not constant for a given device, but varies with temperature; usually more significantly than , so that typically decreases as increases. Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, although this is obviously a function of size). For moderate forward bias voltages the exponential becomes much larger than 1, since the thermal voltage is very small in comparison. The in the diode equation is then negligible, so the forward diode current will approximate
The use of the diode equation in circuit problems is illustrated in the article on diode modeling.
Диод теңдеуін тізбектердегі есептерде қолдану диодты модельдеу туралы мақалада көрсетілген.
Electrical engineering equation
The Shockley diode equation, or the diode law, named after transistor co inventor William Shockley of Bell Labs, models the exponential current–voltage (I–V) relationship of semiconductor diodes in moderate constant current forward bias or reverse bias:
where
is the diode current,
is the reverse bias saturation current (or scale current),
is the voltage across the diode,
is the thermal voltage, and
is the ideality factor, also known as the quality factor or emission coefficient. The equation is called the Shockley ideal diode equation when the ideality factor equals 1, thus is sometimes omitted. The ideality factor typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material. The ideality factor was added to account for imperfect junctions observed in real transistors, mainly due to carrier recombination as charge carriers cross the depletion region. The thermal voltage is approximately 25.852mV at At an arbitrary temperature, it is a known constant:
where
is the Boltzmann constant,
is the absolute temperature of the p–n junction, and
is the elementary charge (the magnitude of an electron's charge). The reverse saturation current is not constant for a given device, but varies with temperature; usually more significantly than , so that typically decreases as increases. Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, although this is obviously a function of size). For moderate forward bias voltages the exponential becomes much larger than 1, since the thermal voltage is very small in comparison. The in the diode equation is then negligible, so the forward diode current will approximate
The use of the diode equation in circuit problems is illustrated in the article on diode modeling.
The Shockley diode equation, or the diode law, named after transistor co inventor William Shockley of Bell Labs, models the exponential current–voltage (I–V) relationship of semiconductor diodes in moderate constant current forward bias or reverse bias:
where
is the diode current,
is the reverse bias saturation current (or scale current),
is the voltage across the diode,
is the thermal voltage, and
is the ideality factor, also known as the quality factor or emission coefficient. The equation is called the Shockley ideal diode equation when the ideality factor equals 1, thus is sometimes omitted. The ideality factor typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material. The ideality factor was added to account for imperfect junctions observed in real transistors, mainly due to carrier recombination as charge carriers cross the depletion region. The thermal voltage is approximately 25.852mV at At an arbitrary temperature, it is a known constant:
where
is the Boltzmann constant,
is the absolute temperature of the p–n junction, and
is the elementary charge (the magnitude of an electron's charge). The reverse saturation current is not constant for a given device, but varies with temperature; usually more significantly than , so that typically decreases as increases. Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, although this is obviously a function of size). For moderate forward bias voltages the exponential becomes much larger than 1, since the thermal voltage is very small in comparison. The in the diode equation is then negligible, so the forward diode current will approximate
The use of the diode equation in circuit problems is illustrated in the article on diode modeling.
Шектеулер
Ішкі кедергі жоғары тікелей сместеу кезінде нақты диодтың ток-кернеу қисығының "тұрақталануына" себеп болады. Шокли теңдеуі бұл құбылысты модельдей алмайды, бірақ тізбекке кедергі қосу арқылы модельдеуге болады. Кері бұзылу аймағы (әсіресе Зенер диодтары үшін маңызды) Шокли теңдеуімен сипатталмайды. Шокли теңдеуі шуды (мысалы, ішкі кедергіден туындайтын Джонсон-Найквист шуы немесе ағын шуы) модельдей алмайды. Шокли теңдеуі тұрақты ток (қалыпты күй) қатынасын көрсетеді, сондықтан диодтың өткінші процесін, оның ішкі байланысы мен диффузиялық сыйымдылығының және кері қалпына келтіру уақытының әсерін ескермейді.
Internal resistance causes "leveling off" of a real diode's I–V curve at high forward bias. The Shockley equation doesn't model this, but adding a resistance in series will. The reverse breakdown region (particularly of interest for Zener diodes) is not modeled by the Shockley equation. The Shockley equation doesn't model noise (such as Johnson–Nyquist noise from the internal resistance, or shot noise). The Shockley equation is a constant current (steady state) relationship, and thus doesn't account for the diode's transient response, which includes the influence of its internal junction and diffusion capacitance and reverse recovery time.