Триметилалюминий: қасиеттері мен қолданылуы

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| verifiedrevid = 470615359
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| ImageFile = Trimethylaluminium from xtal 3D bs 17 25. png
| ImageFile1 = Trimethylaluminium from xtal 3D sf. png
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| IUPACName = Trimethylalumane
| OtherNames = Trimethylaluminum; aluminium trimethyl; aluminum trimethyl
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| Section1 =
| Section2 = Chembox Properties
| Formula = C6H18Al2
| MolarMass = 144.17 g/mol 72.09 g/mol (C3H9Al)
| Appearance = Colorless liquid
| Density = 0.752 g/cm3
| MeltingPtC = 15
| BoilingPtC = 125 130
| BoilingPt ref =
| Entropy = 209.4J/mol·K
| GHSSignalWord = Danger
| HPhrases =

The structure and bonding in Al2R6 and diborane are analogous (R = alkyl). In Al2Me6, the Al C(terminal) and Al C(bridging) distances are 1.97 and 2.14 Å, respectively. The Al center is tetrahedral. The carbon atoms of the bridging methyl groups are each surrounded by five neighbors: three hydrogen atoms and two aluminium atoms. The methyl groups interchange readily intramolecularly. At higher temperatures, the dimer cracks into monomeric AlMe3.

Starting with the invention of Ziegler Natta catalysis, organoaluminium compounds have a prominent role in the production of polyolefins, such as polyethylene and polypropylene. Methylaluminoxane, which is produced from TMA, is an activator for many transition metal catalysts.

TMA is also used in semiconductor fabrication to deposit thin film, high k dielectrics such as Al2O3 via the processes of chemical vapor deposition or atomic layer deposition. TMA is the preferred precursor for metalorganic vapour phase epitaxy (MOVPE) of aluminium containing compound semiconductors, such as AlAs, AlN, AlP, AlSb, AlGaAs, AlInGaAs, AlInGaP, AlGaN, AlInGaN, AlInGaNP, etc. Criteria for TMA quality focus on (a) elemental impurities, (b) oxygenated and organic impurities.

In deposition processes very similar to semiconductor processing, TMA is used to deposit thin film, low k (non absorbing) dielectric layer stacks with Al2O3 via the processes of chemical vapor deposition or atomic layer deposition. The Al2O3 provides excellent surface passivation of p doped silicon surfaces. The Al2O3 layer is typically the bottom layer with multiple silicon nitride (SixNy) layers for capping.

TMA reacts with many metal halides to install alkyl groups. When combined with gallium trichloride, it gives trimethylgallium. Al2Me6 reacts with aluminium trichloride to give (AlMe2Cl)2. TMA/metal halide reactions have emerged as reagents in organic synthesis. Tebbe's reagent, which is used for the methylenation of esters and ketones, is prepared from TMA and titanocene dichloride. In combination with 20 to 100 mol % Cp2ZrCl2 (zirconocene dichloride), the (CH3)2Al CH3 adds "across" alkynes to give vinyl aluminium species that are useful in organic synthesis in a reaction known as carboalumination.

As for other "electron deficient" compounds, trimethylaluminium gives adducts R3N. AlMe3. The Lewis acid properties of AlMe3 have been quantified. The enthalpy data show that AlMe3 is a hard acid and its acid parameters in the ECW model are EA =8.66 and CA = 3.68. These adducts, e. g. the complex with the tertiary amine DABCO, are safer to handle than TMA itself. The NASA ATREX mission (Anomalous Transport Rocket Experiment) employed the white smoke that TMA forms on air contact to study the high altitude jet stream.

TMA is a source of methyl nucleophiles, akin to methyl lithium, but less reactive. It reacts with ketones to give, after a hydrolytic workup, tertiary alcohols.

Trimethylaluminium is pyrophoric, reacting violently with air and water.