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Method used to apply surface coatings
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Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, and high performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by products are also produced, which are removed by gas flow through the reaction chamber. Microfabrication processes widely use CVD to deposit materials in various forms, including: monocrystalline, polycrystalline, amorphous, and epitaxial. These materials include: silicon (dioxide, carbide, nitride, oxynitride), carbon (fiber, nanofibers, nanotubes, diamond and graphene), fluorocarbons, filaments, tungsten, titanium nitride and various high κ dielectrics. The term chemical vapour deposition was coined in 1960 by John M. Blocher, Jr. who intended to differentiate chemical from physical vapour deposition (PVD).

CVD is commonly used to deposit conformal films and augment substrate surfaces in ways that more traditional surface modification techniques are not capable of. CVD is extremely useful in the process of atomic layer deposition at depositing extremely thin layers of material. A variety of applications for such films exist. Gallium arsenide is used in some integrated circuits (ICs) and photovoltaic devices. Amorphous polysilicon is used in photovoltaic devices. Certain carbides and nitrides confer wear resistance. Polymerization by CVD, perhaps the most versatile of all applications, allows for super thin coatings which possess some very desirable qualities, such as lubricity, hydrophobicity and weather resistance to name a few. The CVD of metal organic frameworks, a class of crystalline nanoporous materials, has recently been demonstrated. Recently scaled up as an integrated cleanroom process depositing large area substrates, the applications for these films are anticipated in gas sensing and low κ dielectrics. CVD techniques are advantageous for membrane coatings as well, such as those in desalination or water treatment, as these coatings can be sufficiently uniform (conformal) and thin that they do not clog membrane pores.

In spite of graphene's exciting electronic and thermal properties, it is unsuitable as a transistor for future digital devices, due to the absence of a bandgap between the conduction and valence bands. This makes it impossible to switch between on and off states with respect to electron flow. Scaling things down, graphene nanoribbons of less than 10 nm in width do exhibit electronic bandgaps and are therefore potential candidates for digital devices. Precise control over their dimensions, and hence electronic properties, however, represents a challenging goal, and the ribbons typically possess rough edges that are detrimental to their performance.

CVD can be used to produce a synthetic diamond by creating the circumstances necessary for carbon atoms in a gas to settle on a substrate in crystalline form. CVD of diamonds has received much attention in the materials sciences because it allows many new applications that had previously been considered too expensive. CVD diamond growth typically occurs under low pressure (1–27 kPa; 0.145–3.926 psi; 7.5–203 Torr) and involves feeding varying amounts of gases into a chamber, energizing them and providing conditions for diamond growth on the substrate. The gases always include a carbon source, and typically include hydrogen as well, though the amounts used vary greatly depending on the type of diamond being grown. Energy sources include hot filament, microwave power, and arc discharges, among others. The energy source is intended to generate a plasma in which the gases are broken down and more complex chemistries occur. The actual chemical process for diamond growth is still under study and is complicated by the very wide variety of diamond growth processes used. Using CVD, films of diamond can be grown over large areas of substrate with control over the properties of the diamond produced. In the past, when high pressure high temperature (HPHT) techniques were used to produce a diamond, the result was typically very small free standing diamonds of varying sizes. With CVD diamond, growth areas of greater than fifteen centimeters (six inches) in diameter have been achieved, and much larger areas are likely to be successfully coated with diamond in the future. Improving this process is key to enabling several important applications. The growth of diamond directly on a substrate allows the addition of many of diamond's important qualities to other materials. Since diamond has the highest thermal conductivity of any bulk material, layering diamond onto high heat producing electronics (such as optics and transistors) allows the diamond to be used as a heat sink. Diamond films are being grown on valve rings, cutting tools, and other objects that benefit from diamond's hardness and exceedingly low wear rate. In each case the diamond growth must be carefully done to achieve the necessary adhesion onto the substrate. Diamond's very high scratch resistance and thermal conductivity, combined with a lower coefficient of thermal expansion than Pyrex glass, a coefficient of friction close to that of Teflon (polytetrafluoroethylene) and strong lipophilicity would make it a nearly ideal non stick coating for cookware if large substrate areas could be coated economically. CVD growth allows one to control the properties of the diamond produced. In the area of diamond growth, the word "diamond" is used as a description of any material primarily made up of sp3 bonded carbon, and there are many different types of diamond included in this. By regulating the processing parameters—especially the gases introduced, but also including the pressure the system is operated under, the temperature of the diamond, and the method of generating plasma—many different materials that can be considered diamond can be made. Single crystal diamond can be made containing various dopants. Polycrystalline diamond consisting of grain sizes from several nanometers to several micrometers can be grown. Some polycrystalline diamond grains are surrounded by thin, non diamond carbon, while others are not. These different factors affect the diamond's hardness, smoothness, conductivity, optical properties and more.

Commercially, mercury cadmium telluride is of continuing interest for detection of infrared radiation. Consisting of an alloy of CdTe and HgTe, this material can be prepared from the dimethyl derivatives of the respective elements.